| PART |
Description |
Maker |
| AD5821ABCBZ-REEL AD5821ABCBZ-REEL7 AD5821A AD5821A |
120 mA, Current Sinking, 10-Bit, I2C DAC
|
Analog Devices
|
| EVAL-AD5398EB |
120 mA, Current Sinking, 10-Bit, I2C DAC 120毫安，灌电流0位和I2C数模转换
|
Analog Devices, Inc.
|
| VM147 |
Programmable sinking output current
|
Silicon Touch Technolog...
|
| D76L6L-849HZ D76 D76H6B-2.50KHZ D76H6B-33.3KHZ D76 |
32 Pin DIP 6-Pole Filters 32引脚DIP 6极滤波器
103SR Series Unipolar Hall-Effect Digital Position Sensor with 15/32 in cylindrical aluminum housing; two hex nuts; 152,4 mm [6 in] lead wires; current sinking output; and Vdc supply voltage
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Frequency Devices
|
| 3EZ12D5 3EZ4.3D5 3EZ10D5 3EZ5.6D5 3EZ100D5 3EZ110D |
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -20% tolerance.
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -1% tolerance.
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -20% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -10% tolerance.
3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, -4% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -2% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -3% tolerance.
3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, -10% tolerance.
3W SILICON ZENER DIODE
|
JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
娴???洪??靛??ㄤ欢??????
http://
Jinan Gude Electronic D...
|
| ACS710KLATR-25CB-T ACS710KLATR-12CB-T |
120 kHz Bandwidth, High Voltage Isolation Current Sensor with Integrated Overcurrent Detection
|
AVAGO TECHNOLOGIES LIMITED
|
| SC210KSIT |
120 kHz Bandwidth, High Voltage Isolation Current Sensor with Integrated Overcurrent Detection
|
SEC Electronics Inc.
|
| MSK3017-15 |
Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
|
M.S. Kennedy Corporatio...
|
| MSK3014-15 |
Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
|
M.S. Kennedy Corporatio...
|
| AQV234AX AQV234AZ AQV234 AQV234A |
PhotoMOS relay, HS (high sensitivity) type [1-channel (form A) type]. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal. Tube packing style.
PhotoMOS relay, HS (high sensitivity) type [1-channel (form A) type]. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal. Tape and reel packing style, picked from the 4/5/6-pin side.
PhotoMOS relay, HS (high sensitivity) type [1-channel (form A) type]. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal. Tape and reel packing style, picked from the 1/2/3-pin side..
PhotoMOS relay, HS (high sensitivity) type [1-channel (form A) type]. Output rating: load voltage 400 V, load current 120 mA. Through hole terminal. Tupe packing style.
|
Matsushita Electric Works(Nais)
NAIS[Nais(Matsushita Electric Works)]
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